Next Article in Journal
A Fully Integrated 2:1 Self-Oscillating Switched-Capacitor DC–DC Converter in 28 nm UTBB FD-SOI
Next Article in Special Issue
On Improving Reliability of SRAM-Based Physically Unclonable Functions
Previous Article in Journal
Stochastic-Based Spin-Programmable Gate Array with Emerging MTJ Device Technology
 
 

Order Article Reprints

Journal: J. Low Power Electron. Appl., 2016
Volume: 6
Number: 16

Article: Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions
Authors: by Chip-Hong Chang, Chao Qun Liu, Le Zhang and Zhi Hui Kong
Link: https://www.mdpi.com/2079-9268/6/3/16

MDPI offers high quality article reprints with convenient shipping to destinations worldwide. Each reprint features a 270 gsm bright white cover and 105 gsm premium white paper, bound with two stitches for durability and printed in full color. The cover design is customized to your article and designed to be complimentary to the journal.

Quote and Order Details

Contact Person

Invoice Address

Notes or Comments

Validate and Place Order

The order must be prepaid after it is placed

req denotes required fields.
Back to TopTop