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Journal: J. Low Power Electron. Appl., 2016
Volume: 6
Number: 16
Article:
Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions
Authors:
by
Chip-Hong Chang, Chao Qun Liu, Le Zhang and Zhi Hui Kong
Link:
https://www.mdpi.com/2079-9268/6/3/16
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