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J. Low Power Electron. Appl. 2017, 7(1), 2;

On Improving Reliability of SRAM-Based Physically Unclonable Functions

Department of Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, MA 01003, USA
Author to whom correspondence should be addressed.
Academic Editors: Osnat Keren, Ilia Polian and Sanu Mathew
Received: 5 July 2016 / Revised: 2 December 2016 / Accepted: 5 January 2017 / Published: 12 January 2017
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Physically unclonable functions (PUFs) have been touted for their inherent resistance to invasive attacks and low cost in providing a hardware root of trust for various security applications. SRAM PUFs in particular are popular in industry for key/ID generation. Due to intrinsic process variations, SRAM cells, ideally, tend to have the same start-up behavior. SRAM PUFs exploit this start-up behavior. Unfortunately, not all SRAM cells exhibit reliable start-up behavior due to noise susceptibility. Hence, design enhancements are needed for improving reliability. Some of the proposed enhancements in literature include fuzzy extraction, error-correcting codes and voting mechanisms. All enhancements involve a trade-off between area/power/performance overhead and PUF reliability. This paper presents a design enhancement technique for reliability that improves upon previous solutions. We present simulation results to quantify improvement in SRAM PUF reliability and efficiency. The proposed technique is shown to generate a 128-bit key in ≤0.2 μ s at an area estimate of 4538 μ m 2 with error rate as low as 10 6 for intrinsic error probability of 15%. View Full-Text
Keywords: physically unclonable function; SRAM PUF; reliability physically unclonable function; SRAM PUF; reliability

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Vijayakumar, A.; Patil, V.C.; Kundu, S. On Improving Reliability of SRAM-Based Physically Unclonable Functions. J. Low Power Electron. Appl. 2017, 7, 2.

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