Next Article in Journal
Study on Unsaturated Transport of Cement-Based Silane Sol Coating Materials
Next Article in Special Issue
Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor
Previous Article in Journal
Industrial X-ray Fluorescence Analyzer for Real-Time Thickness Measurements of Aluminium Coatings on Rolled Steel
Previous Article in Special Issue
Silicon Phthalocyanines as Acceptor Candidates in Mixed Solution/Evaporation Processed Planar Heterojunction Organic Photovoltaic Devices
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Coatings
Volume 9
Issue 7
10.3390/coatings9070426
coatings-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

by
Jingying Zhang
1,
Xiao Fu
1,
Shangxiong Zhou
1,
Honglong Ning
1,*,
Yiping Wang
2,
Dong Guo
3,
Wei Cai
1,
Zhihao Liang
1,
Rihui Yao
1,* and
Junbiao Peng
1
1
State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China
2
State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
3
School of Materials Science and Engineering, Beihang University, Beijing 100191, China
*
Authors to whom correspondence should be addressed.
Coatings 2019, 9(7), 426; https://doi.org/10.3390/coatings9070426
Submission received: 4 June 2019 / Revised: 3 July 2019 / Accepted: 4 July 2019 / Published: 5 July 2019
(This article belongs to the Special Issue Thin Films for Electronic Applications)
Browse Figures
Versions Notes

Abstract

Solution-processed indium oxide is an ideal transparent semiconductor material with wide band gap. Zirconium is an element characterized by a strong binding ability to oxygen which can inhibit the formation of oxygen vacancies and reduce the surface defect state. In this paper, zirconium doped indium oxide (InxZryO) thin films were prepared by the solution method, with indium oxide being doped with zirconium in order to tune the relative number of oxygen vacancies. The influence of the Zr doping concentration and the post-annealed temperature on the properties of the InxZryO thin films was investigated. The results show that the doping process improves the crystallinity and relative density of the obtained films. A novel nondestructive method named microwave photoconductivity decay (μ-PCD) was used to evaluate the quality of InxZryO thin films by simply measuring their response under laser irradiation. The relative number of oxygen vacancies and the minority carrier concentration achieved minimum values at 10 at.% Zr doping concentration. Furthermore, InxZryO thin films with optimal properties from an electrical point of view were obtained at 10 at.% Zr doping concentration, annealed at 400 °C. Characterized by an average transmittance above 90% in the visible range, the obtained InxZryO thin films can be used as active layer materials in the fabrication of high-performance thin film transistor (TFT) devices.
Keywords: solution process; indium oxide; zirconium doping; oxygen vacancies solution process; indium oxide; zirconium doping; oxygen vacancies

Share and Cite

MDPI and ACS Style

Zhang, J.; Fu, X.; Zhou, S.; Ning, H.; Wang, Y.; Guo, D.; Cai, W.; Liang, Z.; Yao, R.; Peng, J. The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay). Coatings 2019, 9, 426. https://doi.org/10.3390/coatings9070426

AMA Style

Zhang J, Fu X, Zhou S, Ning H, Wang Y, Guo D, Cai W, Liang Z, Yao R, Peng J. The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay). Coatings. 2019; 9(7):426. https://doi.org/10.3390/coatings9070426

Chicago/Turabian Style

Zhang, Jingying, Xiao Fu, Shangxiong Zhou, Honglong Ning, Yiping Wang, Dong Guo, Wei Cai, Zhihao Liang, Rihui Yao, and Junbiao Peng. 2019. "The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)" Coatings 9, no. 7: 426. https://doi.org/10.3390/coatings9070426

APA Style

Zhang, J., Fu, X., Zhou, S., Ning, H., Wang, Y., Guo, D., Cai, W., Liang, Z., Yao, R., & Peng, J. (2019). The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay). Coatings, 9(7), 426. https://doi.org/10.3390/coatings9070426

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop