Article Versions Notes

Liu X, Li Y, Li S, Peng J, Li J, Qin H, Hu M, Dai T, Huang Y, Tian Q, et al. The Influence of Indium Component on the Preparation of a-IGZO Metal-Semiconductor-Metal Ultraviolet Photodetector by Sol–Gel Method. Coatings. 2026; 16(4):494. https://doi.org/10.3390/coatings16040494

Liu, Xianrong, Yong Li, Shun Li, Jie Peng, Ji Li, Hao Qin, Mingzhe Hu, Tianjun Dai, Yanbin Huang, Qin Tian, and et al. 2026. "The Influence of Indium Component on the Preparation of a-IGZO Metal-Semiconductor-Metal Ultraviolet Photodetector by Sol–Gel Method" Coatings 16, no. 4: 494. https://doi.org/10.3390/coatings16040494

Liu, X., Li, Y., Li, S., Peng, J., Li, J., Qin, H., Hu, M., Dai, T., Huang, Y., Tian, Q., Zha, L., Wang, X., Luo, J., & Zhou, Z. (2026). The Influence of Indium Component on the Preparation of a-IGZO Metal-Semiconductor-Metal Ultraviolet Photodetector by Sol–Gel Method. Coatings, 16(4), 494. https://doi.org/10.3390/coatings16040494