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Volume 12
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Article

Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

by
Chunlei Zhao
1,2,
Teng Jiao
1,
Wei Chen
1,
Zeming Li
1,
Xin Dong
1,*,
Zhengda Li
1,
Zhaoti Diao
1,
Yuantao Zhang
1,
Baolin Zhang
1 and
Guotong Du
1
1
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
2
Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry of Education, Jilin Jianzhu University, Xincheng Street 5088, Changchun 130118, China
*
Author to whom correspondence should be addressed.
Coatings 2022, 12(5), 645; https://doi.org/10.3390/coatings12050645
Submission received: 8 April 2022 / Revised: 27 April 2022 / Accepted: 5 May 2022 / Published: 9 May 2022
(This article belongs to the Section Thin Films)
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Abstract

The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. The film thickness reached 4.5 microns, a relatively high value for MOCVD. The full width at half maxima of the (002) diffraction plane of the film was 26.3 arcsec, thus showing high crystalline quality. The film showed n−-type properties with a doping concentration of 3.6 × 1016 cm−3 and electron mobility of 137 cm2/V·s. In addition, the element composition and stress state of the film were characterized and analyzed. This indicates that the MOCVD, supporting high-quality, high-precision epitaxy, is promising for Ga2O3 power devices.
Keywords: Ga2O3; film; XPS; MOCVD Ga2O3; film; XPS; MOCVD

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MDPI and ACS Style

Zhao, C.; Jiao, T.; Chen, W.; Li, Z.; Dong, X.; Li, Z.; Diao, Z.; Zhang, Y.; Zhang, B.; Du, G. Preparation of High-Thickness n−-Ga2O3 Film by MOCVD. Coatings 2022, 12, 645. https://doi.org/10.3390/coatings12050645

AMA Style

Zhao C, Jiao T, Chen W, Li Z, Dong X, Li Z, Diao Z, Zhang Y, Zhang B, Du G. Preparation of High-Thickness n−-Ga2O3 Film by MOCVD. Coatings. 2022; 12(5):645. https://doi.org/10.3390/coatings12050645

Chicago/Turabian Style

Zhao, Chunlei, Teng Jiao, Wei Chen, Zeming Li, Xin Dong, Zhengda Li, Zhaoti Diao, Yuantao Zhang, Baolin Zhang, and Guotong Du. 2022. "Preparation of High-Thickness n−-Ga2O3 Film by MOCVD" Coatings 12, no. 5: 645. https://doi.org/10.3390/coatings12050645

APA Style

Zhao, C., Jiao, T., Chen, W., Li, Z., Dong, X., Li, Z., Diao, Z., Zhang, Y., Zhang, B., & Du, G. (2022). Preparation of High-Thickness n−-Ga2O3 Film by MOCVD. Coatings, 12(5), 645. https://doi.org/10.3390/coatings12050645

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