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Open AccessArticle

Fabrications of Hetero-Junction Schottky Diodes by Electrodeposition of Nano-Structured CuInSe2 Materials Using Different Upper Electrodes

1
School of Information Engineering, Jimei University, Xiamen 361021, China
2
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan City 701, Taiwan
3
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
*
Authors to whom correspondence should be addressed.
Coatings 2020, 10(3), 266; https://doi.org/10.3390/coatings10030266
Received: 21 February 2020 / Revised: 8 March 2020 / Accepted: 10 March 2020 / Published: 12 March 2020
(This article belongs to the Special Issue Selected Papers from IIKII 2019 Conferences)
In this study, CuInSe2 (CIS) films (CIS-TFs) and nanorods (CIS-NRs) were successfully deposited on Mo/glass and p+-silicon (p+-Si) using an electrodeposition method. Anodic aluminum oxide (AAO) was used as the template when the CIS-NRs were deposited. Pt, indium tin oxide (ITO), and Ag were deposited as the upper electrodes using a sputtering method to form the hetero-junction devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si, respectively. When p+-Si was used as the substrate, Al was deposited on p+-Si to form negative electrodes for the devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, and Ag/CIS-NRs/p+-Si. The current–voltage properties of all the hetero-junction devices were measured and we found that the hetero-junction of ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si devices revealed the properties of Schottky diodes but the hetero-junction device of Pt/CIS-NRs/p+-Si device did not. The reason for the cause of the differences between these hetero-junction devices was investigated for this study. View Full-Text
Keywords: CuInSe2 (CIS) films and nanorods; electrodeposition method; anodic aluminum oxide; Schottky diode CuInSe2 (CIS) films and nanorods; electrodeposition method; anodic aluminum oxide; Schottky diode
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Liu, J.; Liu, K.-W.; Houng, M.-P.; Yang, C.-F. Fabrications of Hetero-Junction Schottky Diodes by Electrodeposition of Nano-Structured CuInSe2 Materials Using Different Upper Electrodes. Coatings 2020, 10, 266.

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