Article Versions Notes

Li Z, Yuan R, Guo X, Hu Y, Liu Y, Yu J, Xu K, Li Q, Wang T, Sun Q, et al. Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory. Nanomaterials. 2026; 16(9):516. https://doi.org/10.3390/nano16090516

Li, Zhenhai, Ruihong Yuan, Xingcan Guo, Yiqun Hu, Yongkai Liu, Jiajie Yu, Kangli Xu, Qingxuan Li, Tianyu Wang, Qingqing Sun, and et al. 2026. "Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory" Nanomaterials 16, no. 9: 516. https://doi.org/10.3390/nano16090516

Li, Z., Yuan, R., Guo, X., Hu, Y., Liu, Y., Yu, J., Xu, K., Li, Q., Wang, T., Sun, Q., Zhang, D. W., & Chen, L. (2026). Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory. Nanomaterials, 16(9), 516. https://doi.org/10.3390/nano16090516