Effect of Synthesis Conditions on Graphene Directly Grown on SiO2: Structural Features and Charge Carrier Mobility

Meškinis, Šarūnas; Jankauskas, Šarūnas; Kamarauskas, Lukas; Vasiliauskas, Andrius; Guobienė, Asta; Lazauskas, Algirdas; Gudaitis, Rimantas

doi:10.3390/nano15171315

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Effect of Synthesis Conditions on Graphene Directly Grown on SiO₂: Structural Features and Charge Carrier Mobility

by

Šarūnas Meškinis

^*

,

Šarūnas Jankauskas

,

Lukas Kamarauskas

,

Andrius Vasiliauskas

,

Asta Guobienė

,

Algirdas Lazauskas

^*

and

Rimantas Gudaitis

Institute of Materials Science, Kaunas University of Technology, K. Baršausko 59, LT 51423 Kaunas, Lithuania

^*

Authors to whom correspondence should be addressed.

Nanomaterials 2025, 15(17), 1315; https://doi.org/10.3390/nano15171315

Submission received: 10 July 2025 / Revised: 13 August 2025 / Accepted: 26 August 2025 / Published: 27 August 2025

(This article belongs to the Special Issue 2D Structured Materials: Synthesis, Properties and Applications (2nd Edition))

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Abstract

Graphene was directly grown on SiO₂/Si substrates using microwave plasma-enhanced chemical vapor deposition (PECVD) to investigate how synthesis-driven variations in structure and doping influence carrier transport. The effects of synthesis temperature, plasma power, deposition time, gas flow, and pressure on graphene’s structure and electronic properties were systematically studied. Raman spectroscopy revealed non-monotonic changes in layer number, defect density, and doping levels, reflecting the complex interplay between growth, etching, and self-doping mechanisms. The surface morphology and conductivity were assessed by atomic force microscopy (AFM). Charge carrier mobility, extracted from graphene-based field-effect transistors, showed strong correlations with Raman features, including the intensity ratios and positions of the 2D and G peaks. Importantly, mobility did not correlate with defect density but was linked to reduced self-doping and a weaker graphene–substrate interaction rather than intrinsic structural disorder. These findings suggest that charge transport in PECVD-grown graphene is predominantly limited by interfacial and doping effects. This study offers valuable insights into the synthesis–structure–property relationship, which is crucial for optimizing graphene for electronic and sensing applications.

Keywords: direct synthesis of graphene; FET; PECVD; Raman; self-doping; mobility

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MDPI and ACS Style

Meškinis, Š.; Jankauskas, Š.; Kamarauskas, L.; Vasiliauskas, A.; Guobienė, A.; Lazauskas, A.; Gudaitis, R. Effect of Synthesis Conditions on Graphene Directly Grown on SiO₂: Structural Features and Charge Carrier Mobility. Nanomaterials 2025, 15, 1315. https://doi.org/10.3390/nano15171315

AMA Style

Meškinis Š, Jankauskas Š, Kamarauskas L, Vasiliauskas A, Guobienė A, Lazauskas A, Gudaitis R. Effect of Synthesis Conditions on Graphene Directly Grown on SiO₂: Structural Features and Charge Carrier Mobility. Nanomaterials. 2025; 15(17):1315. https://doi.org/10.3390/nano15171315

Chicago/Turabian Style

Meškinis, Šarūnas, Šarūnas Jankauskas, Lukas Kamarauskas, Andrius Vasiliauskas, Asta Guobienė, Algirdas Lazauskas, and Rimantas Gudaitis. 2025. "Effect of Synthesis Conditions on Graphene Directly Grown on SiO₂: Structural Features and Charge Carrier Mobility" Nanomaterials 15, no. 17: 1315. https://doi.org/10.3390/nano15171315

APA Style

Meškinis, Š., Jankauskas, Š., Kamarauskas, L., Vasiliauskas, A., Guobienė, A., Lazauskas, A., & Gudaitis, R. (2025). Effect of Synthesis Conditions on Graphene Directly Grown on SiO₂: Structural Features and Charge Carrier Mobility. Nanomaterials, 15(17), 1315. https://doi.org/10.3390/nano15171315

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Effect of Synthesis Conditions on Graphene Directly Grown on SiO₂: Structural Features and Charge Carrier Mobility

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