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Nanomaterials
Volume 11
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10.3390/nano11071654
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Article

Growth and Crystallization of SiO2/GeO2 Thin Films on Si(100) Substrates

by
Jordi Antoja-Lleonart
1,
Václav Ocelík
1,
Silang Zhou
1,
Kit de Hond
2,
Gertjan Koster
2,
Guus Rijnders
2 and
Beatriz Noheda
1,*
1
Nanostructures of Functional Oxides, Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen, The Netherlands
2
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7522 NH Enschede, The Netherlands
*
Author to whom correspondence should be addressed.
Nanomaterials 2021, 11(7), 1654; https://doi.org/10.3390/nano11071654
Submission received: 2 June 2021 / Revised: 16 June 2021 / Accepted: 21 June 2021 / Published: 23 June 2021
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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Abstract

The growth of α-quartz-based piezoelectric thin films opens the door to higher-frequency electromechanical devices than those available through top-down approaches. We report on the growth of SiO2/GeO2 thin films by pulsed laser deposition and their subsequent crystallization. By introducing a devitrifying agent uniformly within the film, we are able to obtain the α-quartz phase in the form of platelets with lateral sizes above 100 μm at accessible temperatures. Films containing different amounts of devitrifying agent are investigated, and their crystallinity is ascertained with X-ray diffraction and electron back-scatter diffraction. Our work highlights the difficulty in crystallization when competing phases arise that have markedly different crystalline orientation.
Keywords: quartz; silica thin films; pulsed laser deposition; devitrifying agent; crystallization; electron back-scatter diffraction quartz; silica thin films; pulsed laser deposition; devitrifying agent; crystallization; electron back-scatter diffraction

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MDPI and ACS Style

Antoja-Lleonart, J.; Ocelík, V.; Zhou, S.; de Hond, K.; Koster, G.; Rijnders, G.; Noheda, B. Growth and Crystallization of SiO2/GeO2 Thin Films on Si(100) Substrates. Nanomaterials 2021, 11, 1654. https://doi.org/10.3390/nano11071654

AMA Style

Antoja-Lleonart J, Ocelík V, Zhou S, de Hond K, Koster G, Rijnders G, Noheda B. Growth and Crystallization of SiO2/GeO2 Thin Films on Si(100) Substrates. Nanomaterials. 2021; 11(7):1654. https://doi.org/10.3390/nano11071654

Chicago/Turabian Style

Antoja-Lleonart, Jordi, Václav Ocelík, Silang Zhou, Kit de Hond, Gertjan Koster, Guus Rijnders, and Beatriz Noheda. 2021. "Growth and Crystallization of SiO2/GeO2 Thin Films on Si(100) Substrates" Nanomaterials 11, no. 7: 1654. https://doi.org/10.3390/nano11071654

APA Style

Antoja-Lleonart, J., Ocelík, V., Zhou, S., de Hond, K., Koster, G., Rijnders, G., & Noheda, B. (2021). Growth and Crystallization of SiO2/GeO2 Thin Films on Si(100) Substrates. Nanomaterials, 11(7), 1654. https://doi.org/10.3390/nano11071654

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