In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films

Ramirez-Gutierrez, Cristian Felipe; Lujan-Cabrera, Ivan Alonso; Isaza, Cesar; Anaya Rivera, Ely Karina; Rodriguez-Garcia, Mario Enrique

doi:10.3390/nano11051314

Open AccessArticle

In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films

by

Cristian Felipe Ramirez-Gutierrez

^1,*,†

,

Ivan Alonso Lujan-Cabrera

^2,†

,

Cesar Isaza

¹

,

Ely Karina Anaya Rivera

¹

and

Mario Enrique Rodriguez-Garcia

³

¹

Cuerpo Académico de Tecnologías de la Información y Comunicación Aplicada (TICA), Universidad Politécnica de Querétaro, El Marqués, Querétaro 76240, Mexico

²

Ingeniería Física, Facultad de Ingeniería, Universidad Autónoma de Querétaro, Querétaro 76010, Mexico

³

Centro de Física Aplicada y Tecnología Avanzada, Departamento de Nanotecnología, Universidad Nacional Autónoma de México, Campus Juriquilla, Querétaro 76230, Mexico

^*

Author to whom correspondence should be addressed.

^†

These authors contributed equally to this work.

Nanomaterials 2021, 11(5), 1314; https://doi.org/10.3390/nano11051314

Submission received: 9 April 2021 / Revised: 6 May 2021 / Accepted: 7 May 2021 / Published: 17 May 2021

(This article belongs to the Special Issue Photoacoustic and Photothermal Phenomena in Nanomaterials)

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Abstract

Porous silicon (PSi) on p

^{+ +}

-type (111) silicon substrate has been fabricated by electronically etching method in hydrofluoric acid (HF) media from 5 to 110 mA/cm

^{2}

of anodizing current density. The problem of determining the optical properties of (111) PSi is board through implementing a photoacoustic (PA) technique coupled to an electrochemical cell for real-time monitoring of the formation of porous silicon thin films. PA amplitude allows the calculation of the real part of the films refractive index and porosity using the reflectance self-modulation due to the interference effect between the PSi film and the substrate that produces a periodic PA amplitude. The optical properties are studied from specular reflectance measurements fitted through genetic algorithms, transfer matrix method (TMM), and the effective medium theory, where the Maxwell Garnett (MG), Bruggeman (BR), and Looyenga (LLL) models were tested to determine the most suitable for pore geometry and compared with the in situ PA method. It was found that (111) PSi exhibit a branched pore geometry producing optical anisotropy and high scattering films.

Keywords: photonic crystal; cross section; reflectance; refractive index; dispersion

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MDPI and ACS Style

Ramirez-Gutierrez, C.F.; Lujan-Cabrera, I.A.; Isaza, C.; Anaya Rivera, E.K.; Rodriguez-Garcia, M.E. In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films. Nanomaterials 2021, 11, 1314. https://doi.org/10.3390/nano11051314

AMA Style

Ramirez-Gutierrez CF, Lujan-Cabrera IA, Isaza C, Anaya Rivera EK, Rodriguez-Garcia ME. In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films. Nanomaterials. 2021; 11(5):1314. https://doi.org/10.3390/nano11051314

Chicago/Turabian Style

Ramirez-Gutierrez, Cristian Felipe, Ivan Alonso Lujan-Cabrera, Cesar Isaza, Ely Karina Anaya Rivera, and Mario Enrique Rodriguez-Garcia. 2021. "In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films" Nanomaterials 11, no. 5: 1314. https://doi.org/10.3390/nano11051314

APA Style

Ramirez-Gutierrez, C. F., Lujan-Cabrera, I. A., Isaza, C., Anaya Rivera, E. K., & Rodriguez-Garcia, M. E. (2021). In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films. Nanomaterials, 11(5), 1314. https://doi.org/10.3390/nano11051314

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In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films

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