Zhang, B.; Luo, Y.; Mai, C.; Mu, L.; Li, M.; Wang, J.; Xu, W.; Peng, J.
Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes. Nanomaterials 2021, 11, 1246.
https://doi.org/10.3390/nano11051246
AMA Style
Zhang B, Luo Y, Mai C, Mu L, Li M, Wang J, Xu W, Peng J.
Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes. Nanomaterials. 2021; 11(5):1246.
https://doi.org/10.3390/nano11051246
Chicago/Turabian Style
Zhang, Binbin, Yu Luo, Chaohuang Mai, Lan Mu, Miaozi Li, Junjie Wang, Wei Xu, and Junbiao Peng.
2021. "Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes" Nanomaterials 11, no. 5: 1246.
https://doi.org/10.3390/nano11051246
APA Style
Zhang, B., Luo, Y., Mai, C., Mu, L., Li, M., Wang, J., Xu, W., & Peng, J.
(2021). Effects of ZnMgO Electron Transport Layer on the Performance of InP-Based Inverted Quantum Dot Light-Emitting Diodes. Nanomaterials, 11(5), 1246.
https://doi.org/10.3390/nano11051246