Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Cryogenic CMOS Characteristics
3.2. Low-Dimensional Hole Transport
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Gate Length | EOT | NW Diameter | Channel Concentration | S/D Concentration |
---|---|---|---|---|
16 nm | 1 nm | 18 nm | 1 × 1017 cm−3 | 1 × 1020 cm−3 |
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Gu, J.; Zhang, Q.; Wu, Z.; Yao, J.; Zhang, Z.; Zhu, X.; Wang, G.; Li, J.; Zhang, Y.; Cai, Y.; et al. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs. Nanomaterials 2021, 11, 309. https://doi.org/10.3390/nano11020309
Gu J, Zhang Q, Wu Z, Yao J, Zhang Z, Zhu X, Wang G, Li J, Zhang Y, Cai Y, et al. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs. Nanomaterials. 2021; 11(2):309. https://doi.org/10.3390/nano11020309
Chicago/Turabian StyleGu, Jie, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang, Junjie Li, Yongkui Zhang, Yuwei Cai, and et al. 2021. "Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs" Nanomaterials 11, no. 2: 309. https://doi.org/10.3390/nano11020309