Cheng, C.; Li, Z.; Dong, N.; Li, R.; Wang, J.; Chen, F.
Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications. Nanomaterials 2021, 11, 3203.
https://doi.org/10.3390/nano11123203
AMA Style
Cheng C, Li Z, Dong N, Li R, Wang J, Chen F.
Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications. Nanomaterials. 2021; 11(12):3203.
https://doi.org/10.3390/nano11123203
Chicago/Turabian Style
Cheng, Chen, Ziqi Li, Ningning Dong, Rang Li, Jun Wang, and Feng Chen.
2021. "Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications" Nanomaterials 11, no. 12: 3203.
https://doi.org/10.3390/nano11123203
APA Style
Cheng, C., Li, Z., Dong, N., Li, R., Wang, J., & Chen, F.
(2021). Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications. Nanomaterials, 11(12), 3203.
https://doi.org/10.3390/nano11123203