Article Versions Notes

Jmerik V, Nechaev D, Orekhova K, Prasolov N, Kozlovsky V, Sviridov D, Zverev M, Gamov N, Grieger L, Wang Y, et al. Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range. Nanomaterials. 2021; 11(10):2553. https://doi.org/10.3390/nano11102553

Jmerik, Valentin, Dmitrii Nechaev, Kseniya Orekhova, Nikita Prasolov, Vladimir Kozlovsky, Dmitry Sviridov, Mikhail Zverev, Nikita Gamov, Lars Grieger, Yixin Wang, and et al. 2021. "Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range" Nanomaterials 11, no. 10: 2553. https://doi.org/10.3390/nano11102553

Jmerik, V., Nechaev, D., Orekhova, K., Prasolov, N., Kozlovsky, V., Sviridov, D., Zverev, M., Gamov, N., Grieger, L., Wang, Y., Wang, T., Wang, X., & Ivanov, S. (2021). Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range. Nanomaterials, 11(10), 2553. https://doi.org/10.3390/nano11102553