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Journal: Appl. Sci., 2019
Volume: 9
Number: 1587
1587
Article: High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications
Authors: by Rahimah Mohd Saman, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff and Mohd Ismahadi Syono
Link: https://www.mdpi.com/2076-3417/9/8/1587

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