Kwun, Y.C.; Virk, A.U.R.; Nazeer, W.; Rehman, M.A.; Kang, S.M.
On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry 2018, 10, 320.
https://doi.org/10.3390/sym10080320
AMA Style
Kwun YC, Virk AUR, Nazeer W, Rehman MA, Kang SM.
On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry. 2018; 10(8):320.
https://doi.org/10.3390/sym10080320
Chicago/Turabian Style
Kwun, Young Chel, Abaid Ur Rehman Virk, Waqas Nazeer, M. A. Rehman, and Shin Min Kang.
2018. "On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]" Symmetry 10, no. 8: 320.
https://doi.org/10.3390/sym10080320
APA Style
Kwun, Y. C., Virk, A. U. R., Nazeer, W., Rehman, M. A., & Kang, S. M.
(2018). On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry, 10(8), 320.
https://doi.org/10.3390/sym10080320