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Symmetry 2018, 10(8), 320; https://doi.org/10.3390/sym10080320

On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]

1
Department of Mathematics, Dong-A University, Busan 49315, Korea
2
Department of Mathematics, University of Management and Technology, Lahore 54000, Pakistan
3
Department of Mathematics, Division of Science and Technology, University of Education, Lahore 54000, Pakistan
4
Department of Mathematics and Research Institute of Natural Science, Gyeongsang National University, Jinju 52828, Korea
5
Center for General Education, China Medical University, Taichung 40402, Taiwan
*
Authors to whom correspondence should be addressed.
Received: 4 June 2018 / Revised: 29 July 2018 / Accepted: 30 July 2018 / Published: 3 August 2018
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Abstract

The application of graph theory in chemical and molecular structure research has far exceeded people’s expectations, and it has recently grown exponentially. In the molecular graph, atoms are represented by vertices and bonds by edges. Topological indices help us to predict many physico-chemical properties of the concerned molecular compound. In this article, we compute Generalized first and multiplicative Zagreb indices, the multiplicative version of the atomic bond connectivity index, and the Generalized multiplicative Geometric Arithmetic index for silicon-carbon Si2C3I[p,q] and Si2C3II[p,q] second. View Full-Text
Keywords: molecular graph; degree-based index; silicon-carbon molecular graph; degree-based index; silicon-carbon
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Kwun, Y.C.; Virk, A.R.; Nazeer, W.; Rehman, M.A.; Kang, S.M. On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry 2018, 10, 320.

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