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Crystals 2019, 9(4), 192; https://doi.org/10.3390/cryst9040192

Thin-Film Optical Devices Based on Transparent Conducting Oxides: Physical Mechanisms and Applications

Department of Electronics, Pusan National University, Pusan 46241, Korea
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Received: 25 February 2019 / Revised: 24 March 2019 / Accepted: 27 March 2019 / Published: 3 April 2019
(This article belongs to the Special Issue Thin Film Transistor)
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Abstract

This paper provides a review of optical devices based on a wide band-gap transparent conducting oxide (TCO) while discussing related physical mechanisms and potential applications. Intentionally using a light-induced metastability mechanism of oxygen defects in TCOs, it is allowed to detect even visible lights, eluding to a persistent photoconductivity (PPC) as an optical memory action. So, this PPC phenomenon is naturally useful for TCO-based optical memory applications, e.g., optical synaptic transistors, as well as photo-sensors along with an electrical controllability of a recovery speed with gate pulse or bias. Besides the role of TCO channel layer in thin-film transistor structure, a defective gate insulator can be another approach for a memory operation with assistance for gate bias and illuminations. In this respect, TCOs can be promising materials for a low-cost transparent optoelectronic application. View Full-Text
Keywords: transparent conducting oxides; oxygen defects; persistent photoconductivity; photo-sensors; optical synaptic devices transparent conducting oxides; oxygen defects; persistent photoconductivity; photo-sensors; optical synaptic devices
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Jang, J.; Kang, Y.; Cha, D.; Bae, J.; Lee, S. Thin-Film Optical Devices Based on Transparent Conducting Oxides: Physical Mechanisms and Applications. Crystals 2019, 9, 192.

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