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Open AccessArticle

Monotype Organic Dual Threshold Voltage Using Different OTFT Geometries

1
Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), 08193 Bellaterra, Catalonia, Spain
2
NeuDrive Limited, Biohub, Alderley Park, Macclesfield SK10 4TG, UK
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(7), 333; https://doi.org/10.3390/cryst9070333
Received: 21 May 2019 / Revised: 25 June 2019 / Accepted: 27 June 2019 / Published: 28 June 2019
(This article belongs to the Special Issue Thin Film Transistor)
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Abstract

It is well known that organic thin film transistor (OTFT) parameters can be shifted depending on the geometry of the device. In this work, we present two different transistor geometries, interdigitated and Corbino, which provide differences in the key parameters of devices such as threshold voltage (VT), although they share the same materials and fabrication procedure. Furthermore, it is proven that Corbino geometries are good candidates for saturation-mode current driven devices, as they provide higher ION/IOFF ratios. By taking advantage of these differences, circuit design can be improved and the proposed geometries are, therefore, particularly suited for the implementation of logic gates. The results demonstrate a high gain and low hysteresis organic monotype inverter circuit with full swing voltage at the output. View Full-Text
Keywords: OTFT; interdigitated; Corbino; dual-threshold inverter; modelling; simulation OTFT; interdigitated; Corbino; dual-threshold inverter; modelling; simulation
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Arnal, A.; Martínez-Domingo, C.; Ogier, S.; Terés, L.; Ramon, E. Monotype Organic Dual Threshold Voltage Using Different OTFT Geometries. Crystals 2019, 9, 333.

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