Search Results (25)

All-optical memristors possess light-sensing and storage capabilities while simultaneously simulating human synaptic functions, demonstrating immense potential in the field of brain-inspired computing for realizing bionic synapses and brain-like intelligence. In this work, we successfully produced ε-Ga₂O₃ films, ε/β-Ga₂O₃ mixed-phase films, and β-Ga₂O₃ films via chemical vapor deposition (CVD). The optical output and optical response characteristics of the thin films are investigated under 254 nm and 365 nm lasers. The CVD-grown ε-Ga₂O₃ is found to process a small amount of defects and insignificant memristive properties and the β-Ga₂O₃ obtained from the annealing of ε-Ga₂O₃ exhibits superior crystal quality but lacks memristive properties, while the ε/β-Ga₂O₃ mixed-phase films grown directly by CVD contain a fair amount of defects and demonstrate persistent resistance retention exceeding 104 s. Based on the excellent memristive properties of ε/β-Ga₂O₃ mixed-phase films, we conducted experiments simulating optical synapses. By adjusting optical pulse parameters (intensity, repetition rate, and duration), we successfully modeled the short-term plasticity (STP) and long-term plasticity (LTP) observed in biological synapses. Experiments confirm that light stimulation can effectively induce synaptic behaviors, such as the progressive conversion of short-term memory (STM) into long-term memory (LTM), and further fully reproduce the neuroplasticity process of “learning-forgetting-relearning.” This study demonstrates a photoconductive synapse memristor based on the wide-bandgap material gallium oxide, exhibiting exceptional air stability with sustained photoconductivity maintained for over a year. This study provides new insights into the practical application feasibility of all-optical artificial synapses based on gallium oxide. Full article

This study systematically investigated the effects of oxygen plasma treatment on oxygen vacancy defects in sputtered β-gallium oxide (β-Ga₂O₃) films and their corresponding ultraviolet (UV) detection performance. The sputtered β-Ga₂O₃ film subjected to 1 min of oxygen plasma treatment exhibited optimal photodetection properties. Compared to the untreated sample, the dark current was reduced by approximately one order of magnitude to 0.378 pA at 10 V bias. It exhibited an 86% (from 2.92 s to 0.41 s) decrease in response time, a 41.6% increase in photocurrent, a very high photo-to-dark current ratio of 9.18 × 10⁵, and a specific detectivity of 2.62 × 10¹⁰ cm·Hz^1/2W⁻¹ under 254 nm UV illumination intensity of 799 μW/cm² at 10 V bias. Notably, appropriate oxygen plasma treatment minimizes electron capture, enhances the separation and collection of photogenerated carriers, and suppresses the persistent photoconductivity (PPC) effect, thus ultimately shortening the response time. Oxygen plasma processing thus provides an effective approach to fabricating high-performance β-Ga₂O₃ solar-blind photodetectors (SBPDs). Full article

We report Al/ZnO/Al optoelectronic synaptic devices fabricated on c-plane and m-plane sapphire substrates using a sol–gel process. The devices exhibit essential synaptic behaviors such as excitatory postsynaptic current modulation, paired-pulse facilitation, and long-term learning–forgetting dynamics described by Wickelgren’s power law. Comparative analysis reveals that substrate orientation strongly influences memory performance: devices on m-plane consistently show higher EPSCs, slower decay rates, and superior retention compared to c-plane counterparts. These characteristics are attributed to crystallographic effects that enhance carrier trapping and persistent photoconductivity. To demonstrate their practical applicability, 3 × 3-pixel arrays of adjacent devices were constructed, where a “T”-shaped optical pattern was successfully encoded, learned, and retained across repeated stimulation cycles. These results highlight the critical role of substrate orientation in tailoring synaptic plasticity and memory retention, offering promising prospects for ZnO-based optoelectronic synaptic arrays in in-sensor neuromorphic computing and artificial visual memory systems. Full article

Ultra-wide bandgap β-Ga₂O₃ is a promising low-cost alternative to conventional direct X-ray detector materials that are limited by fabrication complexity, instability, or slow temporal response. Here, we comparatively investigate β-Ga₂O₃ thin films grown on c-sapphire by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced CVD (PECVD), establishing a quantitative linkage between growth kinetics, microstructure, defect landscape, and X-ray detection figures of merit. The LPCVD-grown film (thickness ≈ 0.289 μm) exhibits layered coalesced grains, a narrower rocking curve (FWHM = 1.840°), and deep-level oxygen-vacancy-assisted high photoconductive gain, yielding a high sensitivity of 1.02 × 10⁵ μC Gy_air⁻¹ cm⁻² at 20 V and a thickness-normalized sensitivity of 3.539 × 10⁵ μCGy_air⁻¹ cm⁻² μm⁻¹. In contrast, the PECVD-grown film (≈1.57 μm) shows dense columnar growth, higher O/Ga stoichiometric proximity, and shallow-trap dominance, enabling a lower dark current, superior dose detection limit (30.13 vs. 57.07 nGy_air s⁻¹), faster recovery, and monotonic SNR improvement with bias. XPS and dual exponential transient analysis corroborate a deep-trap persistent photoconductivity mechanism in LPCVD versus moderated shallow trapping in PECVD. The resulting high-gain vs. low-noise complementary paradigm clarifies defect–gain trade spaces and provides a route to engineer β-Ga₂O₃ thin-film X-ray detectors that simultaneously target high sensitivity, low dose limit, and temporal stability through trap and electric field management. Full article

We report the fabrication and characterization of Al-doped ZnO (AZO) optoelectronic synaptic devices based on sol–gel-derived thin films with varying Al concentrations (0~4.0 wt%). Structural and optical analyses reveal that moderate Al doping modulates the crystal orientation, optical bandgap, and defect levels of ZnO films. Notably, 2.0 wt% Al doping yields the widest bandgap (3.31 eV), stable PL emission, and uniform deep-level absorption without inducing significant lattice disorder. Synaptic performance, including learning–forgetting dynamics and persistent photoconductivity (PPC), is strongly dependent on Al concentration. The 2.0 wt% AZO device exhibits the lowest forgetting rate and longest memory retention due to optimized trap formation, particularly Al–oxygen vacancy complexes that enhance carrier lifetime. Visual memory simulations using a 3 × 3 pixel array under patterned UV illumination further confirm superior long-term memory (LTM) behavior at 2.0 wt%, with stronger excitatory postsynaptic current (EPSC) retention during repeated stimulation. These results demonstrate that precise doping control via the sol–gel method enables defect engineering in oxide-based neuromorphic devices. Our findings provide an effective strategy for designing low-cost, scalable optoelectronic synapses with tunable memory characteristics suitable for future in-sensor computing and neuromorphic vision systems. Full article

The study explores the optical and transport properties of polycrystalline ZnO thin films prepared using reactive pulsed mid-frequency sputtering with RF electron cyclotron wave resonance (ECWR) plasma. This deposition method increases the ionization degree of sputtered particles, the dissociation of reactive gas and the plasma density of pulsed reactive magnetron plasma. Optical absorption spectra reveal a sharp Urbach edge, indicating low valence band disorder. Lattice disorder and deep defect concentration are more likely to occur in samples with higher roughness. PL analysis at low temperature reveals in all samples a relatively slow (μs) red emission band related to deep bulk defects. The fast (sub-ns), surface-related blue PL band was observed in some samples. Blue PL disappeared after annealing in air at 500 °C. Room temperature Hall effect measurements confirm n-type conductivity, though with relatively low mobility, suggesting defect-related scattering. Persistent photoconductivity was observed under UV illumination, indicating deep trap states affecting charge transport. These results highlight the impact of deposition and post-treatment on polycrystalline ZnO thin films, offering insights into optimizing their performance for optoelectronic applications, such as UV detectors and transparent conductive oxides. Full article

Two-terminal optoelectronic synaptic devices based on ZnO nanoparticles (NPs) were fabricated to investigate the effects of thermal annealing control (200 °C–500 °C) in nitrogen and oxygen atmospheres on surface morphology, optical response, and synaptic functionality. Atomic force microscopy (AFM) analysis revealed improved grain growth and reduced surface roughness. At the same time, UV–visible spectroscopy and photoluminescence confirmed a blue shift in the absorption edge and enhanced near-band-edge emission, particularly in nitrogen-annealed devices due to increased oxygen vacancies. X-ray photoelectron spectroscopy (XPS) analysis of the O 1s spectra confirmed that oxygen vacancies were more pronounced in nitrogen-annealed devices than in oxygen-annealed ones at 500 °C. Optical resistive switching was observed, where 365 nm ultraviolet (UV) irradiation induced a transition from a high-resistance state (HRS) to a low-resistance state (LRS), attributed to electron–hole pair generation and oxygen desorption. The electrical reset process, achieved by applying −1.0 V to −5.0 V, restored the initial HRS, demonstrating stable switching behavior. Nitrogen-annealed devices with higher oxygen vacancies exhibited superior synaptic performance, including higher excitatory postsynaptic currents, stronger paired-pulse facilitation, and extended persistent photoconductivity (PPC) duration, enabling long-term memory retention. By systematically varying UV exposure time, intensity, pulse number, and frequency, ZnO NPs-based devices demonstrated the transition from short-term to long-term memory, mimicking biological synaptic behavior. Learning and forgetting simulations showed faster learning and slower decay in nitrogen-annealed devices, emphasizing their potential for next-generation neuromorphic computing and energy-efficient artificial synapses. Full article

The measurement and description of the charge-carrier lifetime (${\tau }_{\mathrm{c}}$) is crucial for the wide-ranging applications of lead-halide perovskites. We present time-resolved microwave-detected photoconductivity decay (TRMCD) measurements and a detailed analysis of the possible recombination mechanisms including trap-assisted, radiative, and Auger recombination. We prove that performing injection-dependent measurement is crucial in identifying the recombination mechanism. We present temperature and injection level dependent measurements in CsPbBr₃, which is the most common inorganic lead-halide perovskite. In this material, we observe the dominance of charge-carrier trapping, which results in ultra-long charge-carrier lifetimes. Although charge trapping can limit the effectiveness of materials in photovoltaic applications, it also offers significant advantages for various alternative uses, including delayed and persistent photodetection, charge-trap memory, afterglow light-emitting diodes, quantum information storage, and photocatalytic activity. Full article

A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility. In this work, it was found that the photogenerated free charge carriers of the GaN substrate, as an exogenous stimulus, served to promote neural stem cells (NSCs) to differentiate into neurons. This was observed through the systematic investigation of the effect of the persistent photoconductivity (PPC) of GaN on the differentiation of primary NSCs from the embryonic rat cerebral cortex. NSCs were directly cultured on the GaN surface with and without ultraviolet (UV) irradiation, with a control sample consisting of tissue culture polystyrene (TCPS) in the presence of fetal bovine serum (FBS) medium. Through optical microscopy, the morphology showed a greater number of neurons with the branching structures of axons and dendrites on GaN with UV irradiation. The immunocytochemical results demonstrated that GaN with UV irradiation could promote the NSCs to differentiate into neurons. Western blot analysis showed that GaN with UV irradiation significantly upregulated the expression of two neuron-related markers, βIII-tubulin (Tuj-1) and microtubule-associated protein 2 (MAP-2), suggesting that neurite formation and the proliferation of NSCs during differentiation were enhanced by GaN with UV irradiation. Finally, the results of the Kelvin probe force microscope (KPFM) experiments showed that the NSCs cultured on GaN with UV irradiation displayed about 50 mV higher potential than those cultured on GaN without irradiation. The increase in cell membrane potential may have been due to the larger number of photogenerated free charges on the GaN surface with UV irradiation. These results could benefit topical research and the application of GaN as a biomedical material integrated into neural interface systems or other bioelectronic devices. Full article

This study investigates the impact of spin-coating speed on the performance of carbon nanotube (CNT)-based optoelectronic synaptic devices, focusing on their long-term memory properties. CNT films fabricated at lower spin speeds exhibited a greater thickness and density compared to those at higher speeds. These denser films showed enhanced persistent photoconductivity, resulting in higher excitatory postsynaptic currents (EPSCs) and the prolonged retention of memory states after UV stimulation. Devices coated at a lower spin-coating speed of 2000 RPM maintained EPSCs above 70% for 3600 s, outperforming their higher-speed counterparts in long-term memory retention. Additionally, the study demonstrated that the learning efficiency improved with repeated UV stimulation, with fewer pulses needed to achieve the maximum EPSC in successive learning cycles. These findings highlight that optimizing spin-coating speeds can significantly enhance the performance of CNT-based synaptic devices, making them suitable for applications in neuromorphic computing and artificial neural networks requiring robust memory retention and efficient learning. Full article

Titanium dioxide coatings (TiO₂) were sprayed using a water-stabilized plasma gun (WSP) to form robust self-supporting bodies with the character of a ceramic disc capacitor (CDC). Agglomerated nanometric powder was used as feedstock. Argon was applied for powder feeding as well as coating–cooling to minimize the influence of ambient air. Stainless steel was used as a substrate, and the coatings were released after cooling. A more than three-millimeter-thick self-supporting TiO₂ plate was observed using HR-TEM and SEM. Porosity was studied by image analysis on polished sections. Thermal post-treatment on the coating was conducted at a rather low temperature of 500 °C. The results of the subsequent dielectric measurement showed high permittivity, but this was strongly frequency-dependent and accompanied by a progressively decreasing loss tangent. On the other hand, the plasma-sprayed TiO₂ exhibited persistent DC photoconductivity under and after illumination with a standard bulb. Full article

Commercially available LaFeO₃ powder was processed using the spark plasma sintering (SPS) technique. The results of the dielectric measurement showed high permittivity, but this was strongly frequency-dependent and was also accompanied by a high loss tangent. The chemical purity of the powder and changes induced by the SPS process influenced the stability of the dielectric parameters of the bulk compacts. A microstructure with a homogeneous grain size and a certain porosity was produced. The microhardness of the sintered LaFeO₃ was rather high, about 8.3 GPa. All the results are in reasonable agreement with the literature related to the production of LaFeO₃ using different techniques. At frequencies as low as 100 Hz, the material behaved like a colossal permittivity ceramic, but this character was lost with the increasing frequency. On the other hand, it exhibited persistent DC photoconductivity after illumination with a standard bulb. Full article

Two-dimensional electron gas (2DEG) at the (100) KTaO₃(KTO) surface and interfaces has attracted extensive interest because of its abundant physical properties. Here, light illumination-induced semiconductor–metal transition in the 2DEG at the KTO surface was investigated. 2DEG was formed at the surface of KTO by argon ion bombardment. The 2DEG prepared with a shorter bombardment time (300 s) exhibits semiconducting behavior in the range of 20~300 K in the dark. However, it shows a different resistance behavior, namely, a metallic state above ~55 K and a semiconducting state below ~55 K when exposed to visible light (405 nm) with a giant conductivity increase of about eight orders of magnitude at 20 K. The suppression of the semiconducting behavior is found to be more pronounced with increasing light power. After removing the illumination, the resistance cannot recover quickly, exhibiting persistent photoconductivity. More interestingly, the photoresponse of the 2DEG below 50 K was almost independent of the laser wavelength, although the photon energy is lower than the band gap of KTO. The present results provide experimental support for tuning oxide 2DEG by photoexcitation, suggesting promising applications of KTO-based 2DEG in future electronic and optoelectronic devices. Full article

In this study, optoelectronic synaptic transistors based on indium–gallium–zinc oxide (IGZO) with a casein electrolyte-based electric double layer (EDL) were examined. The casein electrolyte played a crucial role in modulating synaptic plasticity through an internal proton-induced EDL effect. Thus, important synaptic behaviors, such as excitatory post-synaptic current, paired-pulse facilitation, and spike rate-dependent and spike number-dependent plasticity, were successfully implemented by utilizing the persistent photoconductivity effect of the IGZO channel stimulated by light. The synergy between the light stimulation and the EDL effect allowed the effective modulation of synaptic plasticity, enabling the control of memory levels, including the conversion of short-term memory to long-term memory. Furthermore, a Modified National Institute of Standards and Technology digit recognition simulation was performed using a three-layer artificial neural network model, achieving a high recognition rate of 90.5%. These results demonstrated a high application potential of the proposed optoelectronic synaptic transistors in neuromorphic visual systems. Full article

In this study, quasi-two-dimensional Bi_xSn_1−xO₂ (BTO) thin films were fabricated using a liquid metal transfer method. The ultraviolet (UV) photodetector based on BTO thin films was constructed, and the ultrahigh responsivity of 589 A/W was observed at 300 nm UV light illumination. Interestingly, by dropping ethanol during light-off period, the recovery time induced by the persistent photoconductivity (PPC) effect is reduced from 1.65 × 10³ s to 5.71 s. Furthermore, the recovery time can also be reduced by dropping methanol, propylene glycol, NaNO₂, and Na₂SO₃ after light termination. The working mechanisms are attributed to the rapid consumption of holes stored in BTO thin films by reaction with those solutions. This work demonstrates that the BTO thin films have potential applications in high-performance UV detectors and present an innovation route to weaken the PPC effects in semiconductors by introducing chemical liquids on their surface. Full article