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Journal: Micromachines, 2018
Volume: 9
Number: 396
Article:
An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
Authors:
by
Junfeng Li, Shuman Mao, Yuehang Xu, Xiaodong Zhao, Weibo Wang, Fangjing Guo, Qingfeng Zhang, Yunqiu Wu, Bing Zhang, Tangsheng Chen, Bo Yan, Ruimin Xu and Yanrong Li
Link:
https://www.mdpi.com/2072-666X/9/8/396
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