Next Article in Journal
3D-Printed Biosensor Arrays for Medical Diagnostics
Next Article in Special Issue
Array of Resonant Electromechanical Nanosystems: A Technological Breakthrough for Uncooled Infrared Imaging
Previous Article in Journal
The Conformal Design of an Island-Bridge Structure on a Non-Developable Surface for Stretchable Electronics
Previous Article in Special Issue
AFM-Based Characterization Method of Capacitive MEMS Pressure Sensors for Cardiological Applications
Article Menu
Issue 8 (August) cover image

Export Article

Open AccessArticle
Micromachines 2018, 9(8), 393; https://doi.org/10.3390/mi9080393

Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan
*
Author to whom correspondence should be addressed.
Received: 29 June 2018 / Revised: 1 August 2018 / Accepted: 6 August 2018 / Published: 7 August 2018
(This article belongs to the Special Issue Development of CMOS-MEMS/NEMS Devices)
Full-Text   |   PDF [3542 KB, uploaded 7 August 2018]   |  

Abstract

Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF. View Full-Text
Keywords: micro sensor; Hall effect; magnetic field; magnetotransistor micro sensor; Hall effect; magnetic field; magnetotransistor
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Lin, Y.-N.; Dai, C.-L. Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process. Micromachines 2018, 9, 393.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top