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Keywords = magnetotransistor

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19 pages, 5387 KiB  
Article
Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology
by Chi-Han Wu, Po-Jen Shih, Yao-Chuan Tsai and Ching-Liang Dai
Sensors 2021, 21(21), 6953; https://doi.org/10.3390/s21216953 - 20 Oct 2021
Cited by 8 | Viewed by 2327
Abstract
A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed [...] Read more.
A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE that are respectively employed to detect in the x- and y-direction magnetic field (MF). The z-MSE is used to sense in the z-direction MF. The x/y-MSE, which is constructed by two magnetotransistors, designs four additional collectors that are employed to increase the sensing current and to enhance the sensitivity of the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The measured results reveal that the MS sensitivity is 534 mV/T in the x-direction MF, 525 mV/T in the y-direction MF and 119 mV/T in the z-axis MF. Full article
(This article belongs to the Special Issue Nanotechnology for On-Chip Sensing)
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11 pages, 3542 KiB  
Article
Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process
by Yen-Nan Lin and Ching-Liang Dai
Micromachines 2018, 9(8), 393; https://doi.org/10.3390/mi9080393 - 7 Aug 2018
Cited by 10 | Viewed by 4208
Abstract
Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the [...] Read more.
Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF. Full article
(This article belongs to the Special Issue Development of CMOS-MEMS/NEMS Devices)
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10 pages, 4005 KiB  
Article
A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process
by Jian-Zhi Tseng, Po-Jen Shih, Cheng-Chih Hsu and Ching-Liang Dai
Appl. Sci. 2017, 7(12), 1289; https://doi.org/10.3390/app7121289 - 11 Dec 2017
Cited by 5 | Viewed by 3006
Abstract
This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shallow trench [...] Read more.
This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shallow trench isolation) oxide in the process was used to limit the current direction and reduce leakage current. The microsensor produces a voltage difference once it senses a magnetic field. An amplifier circuitry magnifies voltage difference into a voltage output. Experiments reveals that the MF microsensor has a sensitivity of 1.45 V/T along the x-axis and a sensitivity of 1.37 V/T along the y-axis. Full article
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12 pages, 722 KiB  
Article
Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process
by Jian-Zhi Tseng, Chyan-Chyi Wu and Ching-Liang Dai
Sensors 2014, 14(4), 6722-6733; https://doi.org/10.3390/s140406722 - 11 Apr 2014
Cited by 8 | Viewed by 6772
Abstract
The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized [...] Read more.
The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA. Full article
(This article belongs to the Special Issue Electromagnetic Components of Mechatronics and Micro-Electro-Mechanical-Systems (MEMS) – Modeling and Design)
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