A DC micro plasma jet for local micro deposition of a:C-H film in the ambient vacuum of scanning electron microscope (SEM) chamber is proposed. Acetylene (C2
) gas was locally fed into the chamber through an orifice shaped gas nozzle (OGN) at 6.6 sccm in flow rate by applying 80 kPa-inlet pressure with an additional direct pumping system equipped on the SEM chamber. As a cathode, a cut of n-type silicon (Si) wafer was placed right in front of the OGN at 200 μm gap distance. By applying a positive DC voltage to the OGN, C2
plasma was generated locally between the electrodes. During discharge, the voltage increased and the current decreased due to deposition of insulating film on the Si wafer with resulting in automatic termination of discharge at the constant source voltage. A symmetric mountain-shaped a:C-H film of 5 μm height was deposited at the center by operation for 15 s. Films were deposited with variation of gas flow rate, gap distance, voltage and current, and deposition time. The films were directly observed by SEM and analyzed by surface profiler and by Raman spectroscopy.
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