Research on the Trajectory and Relative Speed of a Single-Sided Chemical Mechanical Polishing Machine

This study establishes a bidirectional kinematic analysis framework for single-sided chemical mechanical polishing systems through innovative coordinate transformation synergies (rotational and translational). To address three critical gaps in existing research, interaction dynamics for both pad–wafer and abrasive–wafer interfaces are systematically derived via 5-inch silicon wafers. Key advancements include (1) the development of closed-form trajectory equations for resolving multibody tribological interactions, (2) vector-based relative velocity quantification with 17 × 17 grid 3D visualization, and (3) first-principle parametric mapping of velocity nonuniformity (NUV = 0–0.42) across 0–80 rpm operational regimes. Numerical simulations reveal two fundamental regimes: near-unity rotational speed ratios (ω_P/ω_C = [0.95, 1) and (1, 1.05]) generate optimal spiral trajectories that achieve 95% surface coverage, whereas integer multiples produce stable relative velocities (1.75 m/s at 60 rpm). Experimental validation demonstrated 0.3 μm/min removal rates with <1 μm nonuniformity under optimized conditions, which was attributable to velocity stabilization effects. The methodology exhibits inherent extensibility to high-speed operations (>80 rpm) and alternative polishing configurations through coordinate transformation adaptability. This work provides a systematic derivation protocol for abrasive trajectory analysis, a visualization paradigm for velocity optimization, and quantitative guidelines for precision process control—advancing beyond current empirical approaches in surface finishing technology.