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Micromachines
Volume 15
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10.3390/mi15030400
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Communication

Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors

by
Shimin Ge
1,
Juncheng Xiao
1,
Shan Li
2,
Dong Yuan
2,
Yuhua Dong
2 and
Shengdong Zhang
1,3,*
1
School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055, China
2
TCL China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen 518132, China
3
School of Integrated Circuits, Peking University, Beijing 100871, China
*
Author to whom correspondence should be addressed.
Micromachines 2024, 15(3), 400; https://doi.org/10.3390/mi15030400
Submission received: 26 January 2024 / Revised: 9 March 2024 / Accepted: 10 March 2024 / Published: 16 March 2024
(This article belongs to the Special Issue Advanced Thin-Films: Design, Fabrication and Applications, 2nd Edition)
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Abstract

This study reveals the pronounced density of oxygen vacancies (Vo) at the back channel of back-channel-etched (BCE) a-InGaZnO (a-IGZO) thin-film transistors (TFTs) results from the sputtered deposition rather than the wet etching process of the source/drain metal, and they are distributed within approximately 25 nm of the back surface. Furthermore, the existence and distribution depth of the high density of Vo defects are verified by means of XPS spectra analyses. Then, the mechanism through which the above Vo defects lead to the instability of BCE a-IGZO TFTs is elucidated. Lastly, it is demonstrated that the device instability under high-humidity conditions and negative bias temperature illumination stress can be effectively alleviated by etching and thus removing the surface layer of the back channel, which contains the high density of Vo defects. In addition, this etch method does not cause a significant deterioration in the uniformity of electrical characteristics and is quite convenient to implement in practical fabrication processes. Thus, a novel and effective solution to the device instability of BCE a-IGZO TFTs is provided.
Keywords: a-IGZO TFTs; back-channel damage; device stability; oxygen vacancy a-IGZO TFTs; back-channel damage; device stability; oxygen vacancy

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MDPI and ACS Style

Ge, S.; Xiao, J.; Li, S.; Yuan, D.; Dong, Y.; Zhang, S. Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors. Micromachines 2024, 15, 400. https://doi.org/10.3390/mi15030400

AMA Style

Ge S, Xiao J, Li S, Yuan D, Dong Y, Zhang S. Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors. Micromachines. 2024; 15(3):400. https://doi.org/10.3390/mi15030400

Chicago/Turabian Style

Ge, Shimin, Juncheng Xiao, Shan Li, Dong Yuan, Yuhua Dong, and Shengdong Zhang. 2024. "Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors" Micromachines 15, no. 3: 400. https://doi.org/10.3390/mi15030400

APA Style

Ge, S., Xiao, J., Li, S., Yuan, D., Dong, Y., & Zhang, S. (2024). Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors. Micromachines, 15(3), 400. https://doi.org/10.3390/mi15030400

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