Ge, S.; Xiao, J.; Li, S.; Yuan, D.; Dong, Y.; Zhang, S.
Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors. Micromachines 2024, 15, 400.
https://doi.org/10.3390/mi15030400
AMA Style
Ge S, Xiao J, Li S, Yuan D, Dong Y, Zhang S.
Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors. Micromachines. 2024; 15(3):400.
https://doi.org/10.3390/mi15030400
Chicago/Turabian Style
Ge, Shimin, Juncheng Xiao, Shan Li, Dong Yuan, Yuhua Dong, and Shengdong Zhang.
2024. "Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors" Micromachines 15, no. 3: 400.
https://doi.org/10.3390/mi15030400
APA Style
Ge, S., Xiao, J., Li, S., Yuan, D., Dong, Y., & Zhang, S.
(2024). Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors. Micromachines, 15(3), 400.
https://doi.org/10.3390/mi15030400