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Journal: Micromachines, 2024
Volume: 15
Number: 400

Article: Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors
Authors: by Shimin Ge, Juncheng Xiao, Shan Li, Dong Yuan, Yuhua Dong and Shengdong Zhang
Link: https://www.mdpi.com/2072-666X/15/3/400

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