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Micromachines
Volume 15
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10.3390/mi15010127
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Review

The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms

by
Zixuan Sun
1,*,
Sihao Chen
2,
Lining Zhang
2,
Ru Huang
1 and
Runsheng Wang
1,*
1
School of Integrated Circuits, Peking University, Beijing 100871, China
2
School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
*
Authors to whom correspondence should be addressed.
Micromachines 2024, 15(1), 127; https://doi.org/10.3390/mi15010127
Submission received: 20 December 2023 / Revised: 5 January 2024 / Accepted: 9 January 2024 / Published: 12 January 2024
(This article belongs to the Special Issue Reliability Issues in Advanced Transistor Nodes)
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Abstract

With the technological scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability have garnered widespread attention. Traditional single-mode reliability mechanisms and modeling are less sufficient to meet the demands of resilient circuit designs. Mixed-mode reliability mechanisms and modeling have become a focal point of future designs for reliability. This paper reviews the mechanisms and compact aging models of mixed-mode reliability. The mechanism and modeling method of mixed-mode reliability are discussed, including hot carrier degradation (HCD) with self-heating effect, mixed-mode aging of HCD and Bias Temperature Instability (BTI), off-state degradation (OSD), on-state time-dependent dielectric breakdown (TDDB), and metal electromigration (EM). The impact of alternating HCD-BTI stress conditions is also discussed. The results indicate that single-mode reliability analysis is insufficient for predicting the lifetime of advanced technology and circuits and provides guidance for future mixed-mode reliability analysis and modeling.
Keywords: MOSFET; mixed-mode reliability; hot carrier degradation (HCD); bias temperature instability (BTI); self-heating; off-state degradation (OSD); time-dependent dielectric breakdown (TDDB); electromigration (EM) MOSFET; mixed-mode reliability; hot carrier degradation (HCD); bias temperature instability (BTI); self-heating; off-state degradation (OSD); time-dependent dielectric breakdown (TDDB); electromigration (EM)

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MDPI and ACS Style

Sun, Z.; Chen, S.; Zhang, L.; Huang, R.; Wang, R. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms. Micromachines 2024, 15, 127. https://doi.org/10.3390/mi15010127

AMA Style

Sun Z, Chen S, Zhang L, Huang R, Wang R. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms. Micromachines. 2024; 15(1):127. https://doi.org/10.3390/mi15010127

Chicago/Turabian Style

Sun, Zixuan, Sihao Chen, Lining Zhang, Ru Huang, and Runsheng Wang. 2024. "The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms" Micromachines 15, no. 1: 127. https://doi.org/10.3390/mi15010127

APA Style

Sun, Z., Chen, S., Zhang, L., Huang, R., & Wang, R. (2024). The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms. Micromachines, 15(1), 127. https://doi.org/10.3390/mi15010127

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