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Open AccessArticle

The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector

by Chaorong Zhong 1,2,†, Ruijuan Qi 1,†, Yonghui Zheng 3, Yan Cheng 1,4,*, Wenxiong Song 4,* and Rong Huang 1,5
1
Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
2
School of Physical and Telecommunication Engineering, Yulin Normal University, Yulin 537000, China
3
Erich Schmid Institute of Materials Science, Austrian Academy of Science, 8700 Leoben, Austria
4
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
5
Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
*
Authors to whom correspondence should be addressed.
These authors contributed equally.
Micromachines 2020, 11(6), 588; https://doi.org/10.3390/mi11060588
Received: 26 May 2020 / Revised: 6 June 2020 / Accepted: 10 June 2020 / Published: 12 June 2020
(This article belongs to the Special Issue Nanofabrication with Focused Electron/Ion Beam Induced Processing)
Depositing platinum (Pt) interconnectors during the sample preparation process via a focused ion beam (FIB) system is an inescapable procedure for in situ transmission electron microscopy (TEM) investigations. To achieve good electrical contact and avoid irreversible damage in practical samples, the microscopic evolution mechanism of FIB-deposited Pt interconnectors need a more comprehensive understanding, though it is known that its resistivity could be affected by thermal annealing. In this work, an electron-beam FIB-deposited Pt interconnector was studied by advanced spherical aberration (Cs)-corrected TEM combined with an in situ heating and biasing system to clarify the relationship of microscopic evolution to resistivity variation. During the heating process, the Pt interconnector underwent crystallization, organic matter decomposition, Pt nanocrystal growth, grain connection, and conductive path formation, which are combined actions to cause several orders of magnitude of resistivity reduction. The comprehensive understanding of the microscopic evolution of FIB-deposited Pt material is beneficial, not only for optimizing the resistance performance of Pt as an interconnector, but also for understanding the role of C impurities with metal materials. For the purpose of wiring, annealed electron-beam (EB)-deposited Pt material can be recommended for use as an interconnector in devices for research purposes. View Full-Text
Keywords: microscopic evolution; Pt interconnector; in situ heating and biasing; annealing treatment microscopic evolution; Pt interconnector; in situ heating and biasing; annealing treatment
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Zhong, C.; Qi, R.; Zheng, Y.; Cheng, Y.; Song, W.; Huang, R. The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector. Micromachines 2020, 11, 588.

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