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Open AccessArticle

Improved MRD 4H-SiC MESFET with High Power Added Efficiency

School of Microelectronics, Xidian University, Xi’an 710071, China
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Micromachines 2019, 10(7), 479; https://doi.org/10.3390/mi10070479
Received: 5 June 2019 / Revised: 8 July 2019 / Accepted: 12 July 2019 / Published: 17 July 2019
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device is balanced, and the IMRD MESFET with a best power-added efficiency (PAE) is finally obtained. The results show that the PAE of the IMRD MESFET is 68.33%, which is 28.66% higher than the MRD MESFET, and DC and RF performance have not dropped significantly. Compared with the MRD MESFET, the IMRD MESFET has a broader prospect in the field of microwave radio frequency. View Full-Text
Keywords: 4H-SiC; MESFET; IMRD structure; power added efficiency 4H-SiC; MESFET; IMRD structure; power added efficiency
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MDPI and ACS Style

Zhu, S.; Jia, H.; Wang, X.; Liang, Y.; Tong, Y.; Li, T.; Yang, Y. Improved MRD 4H-SiC MESFET with High Power Added Efficiency. Micromachines 2019, 10, 479.

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