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Open AccessArticle

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

School of Microelectronics, Xidian University, Xi’an 710071, China
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Micromachines 2019, 10(7), 444; https://doi.org/10.3390/mi10070444
Received: 30 May 2019 / Revised: 19 June 2019 / Accepted: 24 June 2019 / Published: 2 July 2019
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdown voltage increases by 16.7%, while the gate-to-source capacitance decreases by 17%. The new structure has a better gain than the conventional HEMT. In radio frequency (RF) simulation, the results show that the HGMRB HEMT has 90.8%, 89.3%, and 84.4% power-added efficiency (PAE) at 600 MHz, 1.2 GHz, and 2.4 GHz, respectively, which ensures a large output power density. Overall, the results show that the HGMRB HEMT is a better prospect for high energy efficiency than the conventional HEMT. View Full-Text
Keywords: GaN; HEMT; high gate; multi-recessed buffer; power density; power-added efficiency GaN; HEMT; high gate; multi-recessed buffer; power density; power-added efficiency
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Zhu, S.; Jia, H.; Li, T.; Tong, Y.; Liang, Y.; Wang, X.; Zeng, T.; Yang, Y. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer. Micromachines 2019, 10, 444.

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