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A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

1
Department of Electronics Engineering, Sogang University, Seoul 04107, Korea
2
Department of DRAM Sensing & Advanced Analysis, SK Hynix, Icheon 17336, Korea
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(4), 256; https://doi.org/10.3390/mi10040256
Received: 12 March 2019 / Revised: 12 April 2019 / Accepted: 15 April 2019 / Published: 17 April 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
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Abstract

A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure. View Full-Text
Keywords: dynamic random-access memory storage capacitor; technology-computer-aided design; reliability; leakage current; time-dependent dielectric breakdown dynamic random-access memory storage capacitor; technology-computer-aided design; reliability; leakage current; time-dependent dielectric breakdown
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Choi, W.Y.; Yoon, G.; Chung, W.Y.; Cho, Y.; Shin, S.; Ahn, K.H. A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors. Micromachines 2019, 10, 256.

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