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Open AccessArticle

A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

1
Department of Electronics Engineering, Sogang University, Seoul 04107, Korea
2
Department of DRAM Sensing & Advanced Analysis, SK Hynix, Icheon 17336, Korea
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(4), 256; https://doi.org/10.3390/mi10040256
Received: 12 March 2019 / Revised: 12 April 2019 / Accepted: 15 April 2019 / Published: 17 April 2019
(This article belongs to the Special Issue Extremely-Low-Power Devices and Their Applications)
A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure. View Full-Text
Keywords: dynamic random-access memory storage capacitor; technology-computer-aided design; reliability; leakage current; time-dependent dielectric breakdown dynamic random-access memory storage capacitor; technology-computer-aided design; reliability; leakage current; time-dependent dielectric breakdown
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MDPI and ACS Style

Choi, W.Y.; Yoon, G.; Chung, W.Y.; Cho, Y.; Shin, S.; Ahn, K.H. A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors. Micromachines 2019, 10, 256.

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