Next Article in Journal
Affordable Fabrication of Conductive Electrodes and Dielectric Films for a Paper-Based Digital Microfluidic Chip
Previous Article in Journal
Heterogeneous Immunoassay Using Channels and Droplets in a Digital Microfluidic Platform
Previous Article in Special Issue
A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer
Article Menu
Issue 2 (February) cover image

Export Article

Open AccessArticle
Micromachines 2019, 10(2), 108; https://doi.org/10.3390/mi10020108

Towards an Ultra-Sensitive Temperature Sensor for Uncooled Infrared Sensing in CMOS–MEMS Technology

Electrical and Electronic Engineering, Harran University, Şanlıurfa 63000, Turkey
Received: 10 January 2019 / Revised: 27 January 2019 / Accepted: 1 February 2019 / Published: 6 February 2019
(This article belongs to the Special Issue Development of CMOS-MEMS/NEMS Devices)
Full-Text   |   PDF [1993 KB, uploaded 6 February 2019]   |  

Abstract

Microbolometers and photon detectors are two main technologies to address the needs in Infrared Sensing applications. While the microbolometers in both complementary metal-oxide semiconductor (CMOS) and Micro-Electro-Mechanical Systems (MEMS) technology offer many advantages over photon detectors, they still suffer from nonlinearity and relatively low temperature sensitivity. This paper not only offers a reliable solution to solve the nonlinearity problem but also demonstrate a noticeable potential to build ultra-sensitive CMOS–MEMS temperature sensor for infrared (IR) sensing applications. The possibility of a 31× improvement in the total absolute frequency shift with respect to ambient temperature change is verified via both COMSOL (multiphysics solver) and theory. Nonlinearity problem is resolved by an operating temperature sensor around the beam bending point. The effect of both pull-in force and dimensional change is analyzed in depth, and a drastic increase in performance is achieved when the applied pull-in force between adjacent beams is kept as small as possible. The optimum structure is derived with a length of 57 µm and a thickness of 1 µm while avoiding critical temperature and, consequently, device failure. Moreover, a good match between theory and COMSOL is demonstrated, and this can be used as a guidance to build state-of-the-art designs. View Full-Text
Keywords: CMOS; MEMS; microresonators; microelectromechanical systems; thermal detector; temperature sensor; infrared sensor; microbolometer CMOS; MEMS; microresonators; microelectromechanical systems; thermal detector; temperature sensor; infrared sensor; microbolometer
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Göktaş, H. Towards an Ultra-Sensitive Temperature Sensor for Uncooled Infrared Sensing in CMOS–MEMS Technology. Micromachines 2019, 10, 108.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top