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Journal: Micromachines, 2019
Volume: 10
Number: 875

Article: Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells
Authors: by Wenjie Wang, Wuze Xie, Zejia Deng and Mingle Liao
Link: https://www.mdpi.com/2072-666X/10/12/875

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