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Open AccessArticle

Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode

by Ying Wang 1,2, Liu-An Li 3, Jin-Ping Ao 2,* and Yue Hao 2
1
School of Electronic Information, Northwestern Polytechnical University, Xi’an 710072, China
2
The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
3
School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
*
Author to whom correspondence should be addressed.
Micromachines 2020, 11(1), 97; https://doi.org/10.3390/mi11010097
Received: 7 December 2019 / Revised: 5 January 2020 / Accepted: 9 January 2020 / Published: 16 January 2020
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
In this paper, a novel gallium nitride (GaN)-based heterostructure Gunn diode is proposed for the first time to enhance the output characteristics of Gunn oscillation waveforms. A well-designed grooved anode contact is adopted to separate the long-channel diode into two short-channel diodes in parallel. If the grooved anode contact is positioned in the middle of the device, the output power nearly doubles in the grooved-anode diode compared with the single-channel ones, as does the output frequency. Based on the numerical results, the best output characteristics are obtained at the 2.0-µm symmetrical grooved-anode diode, which produces nearly 5.48 mW of power at the fundamental frequency of 172.81 GHz, with 3.13% efficiency of power conversion. If the grooved anode contact is not positioned in the middle of the diode, the harmonic frequency would be enhanced. The GaN heterostructure grooved-anode Gunn diode has been demonstrated to be an excellent solid-state source of terahertz oscillator. View Full-Text
Keywords: wide band gap semiconductors; numerical simulation; terahertz Gunn diode; grooved-anode diode wide band gap semiconductors; numerical simulation; terahertz Gunn diode; grooved-anode diode
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MDPI and ACS Style

Wang, Y.; Li, L.-A.; Ao, J.-P.; Hao, Y. Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode. Micromachines 2020, 11, 97.

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