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Journal: Micromachines, 2019
Volume: 10
Number: 75
Article:
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor
Authors:
by
Xiaoling Duan, Jincheng Zhang, Jiabo Chen, Tao Zhang, Jiaduo Zhu, Zhiyu Lin and Yue Hao
Link:
https://www.mdpi.com/2072-666X/10/1/75
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