Wiśniewski, P.; Jasiński, J.; Mazurak, A.; Stonio, B.; Majkusiak, B.
Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements. Materials 2021, 14, 6042.
https://doi.org/10.3390/ma14206042
AMA Style
Wiśniewski P, Jasiński J, Mazurak A, Stonio B, Majkusiak B.
Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements. Materials. 2021; 14(20):6042.
https://doi.org/10.3390/ma14206042
Chicago/Turabian Style
Wiśniewski, Piotr, Jakub Jasiński, Andrzej Mazurak, Bartłomiej Stonio, and Bogdan Majkusiak.
2021. "Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements" Materials 14, no. 20: 6042.
https://doi.org/10.3390/ma14206042
APA Style
Wiśniewski, P., Jasiński, J., Mazurak, A., Stonio, B., & Majkusiak, B.
(2021). Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements. Materials, 14(20), 6042.
https://doi.org/10.3390/ma14206042