Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. DC Measurements
3.2. Small-Signal Measurements
3.3. Complex Impedance Spectroscopy
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Wiśniewski, P.; Jasiński, J.; Mazurak, A.; Stonio, B.; Majkusiak, B. Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements. Materials 2021, 14, 6042. https://doi.org/10.3390/ma14206042
Wiśniewski P, Jasiński J, Mazurak A, Stonio B, Majkusiak B. Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements. Materials. 2021; 14(20):6042. https://doi.org/10.3390/ma14206042
Chicago/Turabian StyleWiśniewski, Piotr, Jakub Jasiński, Andrzej Mazurak, Bartłomiej Stonio, and Bogdan Majkusiak. 2021. "Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements" Materials 14, no. 20: 6042. https://doi.org/10.3390/ma14206042