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Volume 13
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10.3390/ma13215041
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Article

Effect of Time-Dependent Characteristics of ZnO Nanoparticles Electron Transport Layer Improved by Intense-Pulsed Light Post-Treatment on Hole-Electron Injection Balance of Quantum-Dot Light-Emitting Diodes

by
Young Joon Han
1,2,
Kyung-Tae Kang
1,
Byeong-Kwon Ju
2,* and
Kwan Hyun Cho
1,*
1
Manufacturing Process Platform Research and Development Department, Korea Institute of Industrial Technology (KITECH), 143 Hanggaul-ro, Sangnok-gu, Ansan-si 15588, Korea
2
Department of Electrical and Electronics Engineering, College of Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
*
Authors to whom correspondence should be addressed.
Materials 2020, 13(21), 5041; https://doi.org/10.3390/ma13215041
Submission received: 10 October 2020 / Revised: 28 October 2020 / Accepted: 5 November 2020 / Published: 9 November 2020
(This article belongs to the Special Issue Materials for Optoelectronic Applications)
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Abstract

We investigated the effect of intense-pulsed light (IPL) post-treatment on the time-dependent characteristics of ZnO nanoparticles (NPs) used as an electron transport layer (ETL) of quantum-dot light-emitting diodes (QLEDs). The time-dependent characteristics of the charge injection balance in QLEDs was observed by fabrication and analysis of single carrier devices (SCDs), and it was confirmed that the time-dependent characteristics of the ZnO NPs affect the device characteristics of QLEDs. Stabilization of the ZnO NPs film properties for improvement of the charge injection balance in QLEDs was achieved by controlling the current density characteristics via filling of the oxygen vacancies by IPL post-treatment.
Keywords: quantum-dot (QD); quantum-dot light-emitting diodes (QLEDs); intense-pulsed light (IPL); zinc-oxide nanoparticles (ZnO NPs) quantum-dot (QD); quantum-dot light-emitting diodes (QLEDs); intense-pulsed light (IPL); zinc-oxide nanoparticles (ZnO NPs)
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MDPI and ACS Style

Han, Y.J.; Kang, K.-T.; Ju, B.-K.; Cho, K.H. Effect of Time-Dependent Characteristics of ZnO Nanoparticles Electron Transport Layer Improved by Intense-Pulsed Light Post-Treatment on Hole-Electron Injection Balance of Quantum-Dot Light-Emitting Diodes. Materials 2020, 13, 5041. https://doi.org/10.3390/ma13215041

AMA Style

Han YJ, Kang K-T, Ju B-K, Cho KH. Effect of Time-Dependent Characteristics of ZnO Nanoparticles Electron Transport Layer Improved by Intense-Pulsed Light Post-Treatment on Hole-Electron Injection Balance of Quantum-Dot Light-Emitting Diodes. Materials. 2020; 13(21):5041. https://doi.org/10.3390/ma13215041

Chicago/Turabian Style

Han, Young Joon, Kyung-Tae Kang, Byeong-Kwon Ju, and Kwan Hyun Cho. 2020. "Effect of Time-Dependent Characteristics of ZnO Nanoparticles Electron Transport Layer Improved by Intense-Pulsed Light Post-Treatment on Hole-Electron Injection Balance of Quantum-Dot Light-Emitting Diodes" Materials 13, no. 21: 5041. https://doi.org/10.3390/ma13215041

APA Style

Han, Y. J., Kang, K.-T., Ju, B.-K., & Cho, K. H. (2020). Effect of Time-Dependent Characteristics of ZnO Nanoparticles Electron Transport Layer Improved by Intense-Pulsed Light Post-Treatment on Hole-Electron Injection Balance of Quantum-Dot Light-Emitting Diodes. Materials, 13(21), 5041. https://doi.org/10.3390/ma13215041

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