Order Article Reprints

Lai Y, Xia L, Xu Q, Li Q, Liu K, Yang M, Zhang S, Han M, Goto T, Zhang L, et al. In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition. Materials. 2020; 13(2):410. https://doi.org/10.3390/ma13020410

Lai, Youfeng, Lixue Xia, Qingfang Xu, Qizhong Li, Kai Liu, Meijun Yang, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang, and et al. 2020. "In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition" Materials 13, no. 2: 410. https://doi.org/10.3390/ma13020410

Lai, Y., Xia, L., Xu, Q., Li, Q., Liu, K., Yang, M., Zhang, S., Han, M., Goto, T., Zhang, L., & Tu, R. (2020). In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition. Materials, 13(2), 410. https://doi.org/10.3390/ma13020410