Next Article in Journal
Microfluidic Rapid Fabrication of Tunable Polyvinyl Alcohol Microspheres for Adsorption Applications
Previous Article in Journal
Growth of β-NaYF4:Eu3+ Crystals by the Solvothermal Method with the Aid of Oleic Acid and Their Photoluminescence Properties
Open AccessArticle

Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions

The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050081, China
Materials 2019, 12(22), 3713; https://doi.org/10.3390/ma12223713
Received: 10 October 2019 / Revised: 1 November 2019 / Accepted: 6 November 2019 / Published: 11 November 2019
The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention was paid to the samples with different seed layer structures. These samples were fabricated by different sputtering and treatment approaches, and accompanied with various electroplating profile adjustments. The images were observed and characterized by X-ray equipment and a scanning electron microscope (SEM). The results show that optimized sputtering and electroplating conditions can help improve the quality of TSVs, which could be interpreted as the interface effect of the TSV structure. View Full-Text
Keywords: TSVs; sputtering; electroplating; interface effect TSVs; sputtering; electroplating; interface effect
Show Figures

Figure 1

MDPI and ACS Style

Zhao, F. Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions. Materials 2019, 12, 3713.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop