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Open AccessArticle

Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions

The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050081, China
Materials 2019, 12(22), 3713;
Received: 10 October 2019 / Revised: 1 November 2019 / Accepted: 6 November 2019 / Published: 11 November 2019
The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention was paid to the samples with different seed layer structures. These samples were fabricated by different sputtering and treatment approaches, and accompanied with various electroplating profile adjustments. The images were observed and characterized by X-ray equipment and a scanning electron microscope (SEM). The results show that optimized sputtering and electroplating conditions can help improve the quality of TSVs, which could be interpreted as the interface effect of the TSV structure. View Full-Text
Keywords: TSVs; sputtering; electroplating; interface effect TSVs; sputtering; electroplating; interface effect
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Zhao, F. Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions. Materials 2019, 12, 3713.

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