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10.3390/ma12132160
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Erratum published on 13 November 2020, see Materials 2020, 13(22), 5132.
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Article

The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior

by
Chunzi Zhang
1,
Ozan Gunes
1,
Yuanshi Li
2,
Xiaoyu Cui
3,
Masoud Mohammadtaheri
2,
Shi-Jie Wen
4,
Rick Wong
4,
Qiaoqin Yang
2 and
Safa Kasap
1,*
1
Department of Electrical and Computer Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9, Canada
2
Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9, Canada
3
Canadian Light Source Inc., 44 Innovation Boulevard, Saskatoon, SK S7N 2V3, Canada
4
Cisco Systems Inc., San Jose, CA 95134, USA
*
Author to whom correspondence should be addressed.
Materials 2019, 12(13), 2160; https://doi.org/10.3390/ma12132160
Submission received: 1 May 2019 / Revised: 24 June 2019 / Accepted: 28 June 2019 / Published: 5 July 2019
(This article belongs to the Section Thin Films and Interfaces)
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Abstract

In this work, VO2 thin films were deposited on Si wafers (onto (100) surface) by DC magnetron sputtering under different cathode bias voltages. The effects of substrate biasing on the structural and optical properties were investigated. The results show that the metal–insulator transition (MIT) temperature of VO2 thin films can be increased up to 14 K by applying a cathode bias voltage, compared to deposition conditions without any bias. The decrease in the transition efficiency and increase in the transition temperature are attributed to the enlarged grain size, increased defects, and the residual stress in the VO2 thin films induced by biasing. The optical transmittance measurements for different thickness films indicate an attenuation coefficient of 3.1 × 107 m−1 at 2000 nm or an extinction coefficient of 4.9 in the metal phase. The optical transmittance vs wavelength characteristics point to an indirect bandgap of 0.6 ± 0.05 eV and significant scattering in the bulk and/or at the interface.
Keywords: VO2 thin films; substrate biasing; transition temperature; sputtering VO2 thin films; substrate biasing; transition temperature; sputtering

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MDPI and ACS Style

Zhang, C.; Gunes, O.; Li, Y.; Cui, X.; Mohammadtaheri, M.; Wen, S.-J.; Wong, R.; Yang, Q.; Kasap, S. The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160. https://doi.org/10.3390/ma12132160

AMA Style

Zhang C, Gunes O, Li Y, Cui X, Mohammadtaheri M, Wen S-J, Wong R, Yang Q, Kasap S. The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials. 2019; 12(13):2160. https://doi.org/10.3390/ma12132160

Chicago/Turabian Style

Zhang, Chunzi, Ozan Gunes, Yuanshi Li, Xiaoyu Cui, Masoud Mohammadtaheri, Shi-Jie Wen, Rick Wong, Qiaoqin Yang, and Safa Kasap. 2019. "The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior" Materials 12, no. 13: 2160. https://doi.org/10.3390/ma12132160

APA Style

Zhang, C., Gunes, O., Li, Y., Cui, X., Mohammadtaheri, M., Wen, S.-J., Wong, R., Yang, Q., & Kasap, S. (2019). The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials, 12(13), 2160. https://doi.org/10.3390/ma12132160

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