An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon

Liu, Huafeng; Luo, Kai; Tang, Shihao; Peng, Danhua; Hu, Fangjing; Tu, Liangcheng

doi:10.3390/ma11122590

Open AccessArticle

An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon

by

Huafeng Liu

^1,2

,

Kai Luo

³,

Shihao Tang

^1,2,

Danhua Peng

^1,2,

Fangjing Hu

^1,2,* and

Liangcheng Tu

^1,2

¹

MOE Key Laboratory of Fundamental Physical Quantities Measurement, Huazhong University of Science and Technology, Wuhan 430074, China

²

Hubei Key Laboratory of Gravitation and Quantum Physics, School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China

³

School of Electronic Information and Communications, Huazhong University of Science and Technology, Wuhan 430074, China

^*

Author to whom correspondence should be addressed.

Materials 2018, 11(12), 2590; https://doi.org/10.3390/ma11122590

Submission received: 4 November 2018 / Revised: 14 December 2018 / Accepted: 18 December 2018 / Published: 19 December 2018

(This article belongs to the Special Issue Materials for Sources and Detectors in the GIGA-TERA-MIR Range)

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Abstract

Metamaterial-based absorbers have been extensively investigated in the terahertz (THz) range with ever increasing performances. In this paper, we propose an all-dielectric THz absorber based on doped silicon. The unit cell consists of a silicon cross resonator with an internal cross-shaped air cavity. Numerical results suggest that the proposed absorber can operate from THz to far-infrared regimes, having an average power absorption of ∼95% between 0.6 and 10 THz. Experimental results using THz time-domain spectroscopy show a good agreement with simulations. The underlying mechanisms for broadband absorption are attributed to the combined effects of multiple cavities modes formed by silicon resonators and bulk absorption in the doped silicon substrate, as confirmed by simulated field patterns and calculated diffraction efficiency. This ultra-wideband absorption is polarization insensitive and can operate across a wide range of the incident angle. The proposed absorber can be readily integrated into silicon-based photonic platforms and used for sensing, imaging, energy harvesting and wireless communications applications in the THz/IR range.

Keywords: terahertz; ultra-wideband; absorber

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MDPI and ACS Style

Liu, H.; Luo, K.; Tang, S.; Peng, D.; Hu, F.; Tu, L. An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon. Materials 2018, 11, 2590. https://doi.org/10.3390/ma11122590

AMA Style

Liu H, Luo K, Tang S, Peng D, Hu F, Tu L. An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon. Materials. 2018; 11(12):2590. https://doi.org/10.3390/ma11122590

Chicago/Turabian Style

Liu, Huafeng, Kai Luo, Shihao Tang, Danhua Peng, Fangjing Hu, and Liangcheng Tu. 2018. "An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon" Materials 11, no. 12: 2590. https://doi.org/10.3390/ma11122590

APA Style

Liu, H., Luo, K., Tang, S., Peng, D., Hu, F., & Tu, L. (2018). An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon. Materials, 11(12), 2590. https://doi.org/10.3390/ma11122590

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An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon

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