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Open AccessArticle

Terahertz Spectroscopy of Amorphous WSe2 and MoSe2 Thin Films

1
Dipartimento di Fisica, Università di Napoli “Federico II,” Piazzale Tecchio 80, I-80125 Naples, Italy
2
CNR-SPIN, UOS Napoli, via Cinthia, I-80126 Naples, Italy
3
CRANN & AMBER Center, School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
4
School of Engineering, Newcastle University, Merz Court, Newcastle upon Tyne NE1 7RU, UK
5
Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, EIT2, 85577 Neubiberg, Germany
*
Author to whom correspondence should be addressed.
Materials 2018, 11(9), 1613; https://doi.org/10.3390/ma11091613
Received: 10 August 2018 / Revised: 28 August 2018 / Accepted: 30 August 2018 / Published: 4 September 2018
(This article belongs to the Special Issue Materials for Sources and Detectors in the GIGA-TERA-MIR Range)
Time domain spectroscopy is used to determine the THz electromagnetic response of amorphous transition metal dichalcogenides WSe2 and MoSe2 in thin-film form. The dielectric function is obtained using a rigorous transmission model to account for the large etalon effect. The Drude–Smith model is applied to retrieve the dielectric function, and from there, the sample conductivity. View Full-Text
Keywords: THz time domain spectroscopy; transition metal dichalcogenides; dielectric function; absorption; refractive index THz time domain spectroscopy; transition metal dichalcogenides; dielectric function; absorption; refractive index
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MDPI and ACS Style

Papari, G.; Koral, C.; Hallam, T.; Duesberg, G.S.; Andreone, A. Terahertz Spectroscopy of Amorphous WSe2 and MoSe2 Thin Films. Materials 2018, 11, 1613.

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