Next Article in Journal
Material Flow Analysis in Indentation by Two-Dimensional Digital Image Correlation and Finite Elements Method
Previous Article in Journal
Soft Ionic Electroactive Polymer Actuators with Tunable Non-Linear Angular Deformation
Previous Article in Special Issue
Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors
Open AccessFeature PaperArticle

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL) and CEMOP/UNINOVA, 2829-516 Caparica, Portugal
IIIT Delhi, Okhla Industrial Estate, Phase III, New Delhi 110020, India
Authors to whom correspondence should be addressed.
Materials 2017, 10(6), 680;
Received: 26 April 2017 / Revised: 19 May 2017 / Accepted: 14 June 2017 / Published: 21 June 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables. View Full-Text
Keywords: bias stress; a-IGZO TFTs; robust oxide TFT circuits; large-area flexible electronics bias stress; a-IGZO TFTs; robust oxide TFT circuits; large-area flexible electronics
Show Figures

Graphical abstract

MDPI and ACS Style

Martins, J.; Bahubalindruni, P.; Rovisco, A.; Kiazadeh, A.; Martins, R.; Fortunato, E.; Barquinha, P. Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits. Materials 2017, 10, 680.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Search more from Scilit
Back to TopTop