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Materials 2017, 10(12), 1415;

Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method

Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 82941, Taiwan
Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
Author to whom correspondence should be addressed.
Received: 19 October 2017 / Revised: 26 November 2017 / Accepted: 7 December 2017 / Published: 12 December 2017
(This article belongs to the Special Issue Stretchable and Flexible Electronic Materials & Devices)
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Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd2O3) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd2O3 thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and current versus voltage (I-V) measurement. The metal-like behavior of ohmic conduction mechanism and metallic cluster reaction of hopping conduction mechanism in initial metallic filament path forming process of the SCF-treated thin films RRAM devices was assumed and discussed. Finally, the electrical conduction mechanism of the thin films RRAM derives for set/reset was also discussed and verified in filament path physical model. View Full-Text
Keywords: SCF; bipolar switching properties; neodymium oxide; thin film; RRAM SCF; bipolar switching properties; neodymium oxide; thin film; RRAM

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Chen, K.-H.; Kao, M.-C.; Huang, S.-J.; Li, J.-Z. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method. Materials 2017, 10, 1415.

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