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Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films
Open AccessArticle

Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method

1
Department of Electrical Engineering and Computer Science, Tung Fang Design University, Kaohsiung 82941, Taiwan
2
Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan
3
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
*
Author to whom correspondence should be addressed.
Materials 2017, 10(12), 1415; https://doi.org/10.3390/ma10121415
Received: 19 October 2017 / Revised: 26 November 2017 / Accepted: 7 December 2017 / Published: 12 December 2017
(This article belongs to the Special Issue Stretchable and Flexible Electronic Materials & Devices)
Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd2O3) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd2O3 thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and current versus voltage (I-V) measurement. The metal-like behavior of ohmic conduction mechanism and metallic cluster reaction of hopping conduction mechanism in initial metallic filament path forming process of the SCF-treated thin films RRAM devices was assumed and discussed. Finally, the electrical conduction mechanism of the thin films RRAM derives for set/reset was also discussed and verified in filament path physical model. View Full-Text
Keywords: SCF; bipolar switching properties; neodymium oxide; thin film; RRAM SCF; bipolar switching properties; neodymium oxide; thin film; RRAM
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MDPI and ACS Style

Chen, K.-H.; Kao, M.-C.; Huang, S.-J.; Li, J.-Z. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method. Materials 2017, 10, 1415.

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