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Materials 2017, 10(11), 1327;

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan
Department of Electrical Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung 82941, Taiwan
Department of Mobile Technology, Toko University, Chiayi 61363, Taiwan
Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan
Authors to whom correspondence should be addressed.
Received: 5 October 2017 / Revised: 3 November 2017 / Accepted: 15 November 2017 / Published: 20 November 2017
(This article belongs to the Special Issue Stretchable and Flexible Electronic Materials & Devices)
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Bi0.8Pr0.2Fe0.95Mn0.05O3/Bi3.96Gd0.04Ti2.95W0.05O12 (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO2/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.6 emu/cm3 and 62 μC/cm2, respectively. Moreover, the bipolar I-V switching curves of BPFMO/BGTWO bilayer thin films resistive random access memory (RRAM) devices were discussed, and investigated for LRS/HRS. View Full-Text
Keywords: ferroelectric properties; multiferroic; magnetic properties; RRAM ferroelectric properties; multiferroic; magnetic properties; RRAM

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Kao, M.-C.; Chen, H.-Z.; Young, S.-L.; Chen, K.-H.; Chiang, J.-L.; Shi, J.-B. Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films. Materials 2017, 10, 1327.

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