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Journal: Materials, 2017
Volume: 10
Number: 1415

Article: Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method
Authors: by Kai-Huang Chen, Ming-Cheng Kao, Shou-Jen Huang and Jian-Zhi Li
Link: https://www.mdpi.com/1996-1944/10/12/1415

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