Next Article in Journal
Influence of Ultrasonic Surface Rolling on Microstructure and Wear Behavior of Selective Laser Melted Ti-6Al-4V Alloy
Next Article in Special Issue
Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects
Previous Article in Journal
Correlation of Structure, Tunable Colors, and Lifetimes of (Sr, Ca, Ba)Al2O4:Eu2+, Dy3+ Phosphors
Previous Article in Special Issue
Photometric and Colorimetric Assessment of LED Chip Scale Packages by Using a Step-Stress Accelerated Degradation Test (SSADT) Method
Open AccessFeature PaperArticle

A Practical Example of GaN-LED Failure Cause Analysis by Application of Combined Electron Microscopy Techniques

Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystr. 10, 91058 Erlangen, Germany
SiCrystal AG, Thurn-und-Taxis Str. 20, 90411 Nuremberg, Germany
Author to whom correspondence should be addressed.
Materials 2017, 10(10), 1202;
Received: 25 July 2017 / Revised: 8 October 2017 / Accepted: 17 October 2017 / Published: 19 October 2017
(This article belongs to the Special Issue Light Emitting Diodes and Laser Diodes: Materials and Devices)
In this paper, we report a failure case of blue LEDs returned from a field application, and propose a practical way to identify the physical and structural reasons for the observed malfunction by a combination of different electron microscope techniques. Cathodoluminescence imaging and electron beam induced current (EBIC) imaging are employed in order to visualize conductive paths through the device in conjunction with subsequent energy dispersive x-ray analysis (EDS), revealing a metal deposition along cracks in the semiconductor layer which short-circuit the device. We demonstrate that the electron beam induced current imaging, in conjunction with other microscopic and analytical techniques at µm scale, is a powerful combination for clearly resolving and visualizing the cause of failure in the GaN LED chip. However, this represents a case study of a real application, which may not have been generally observed in laboratory testing environment. View Full-Text
Keywords: GaN; LED; failure; EBIC GaN; LED; failure; EBIC
Show Figures

Figure 1

MDPI and ACS Style

Meissner, E.; Haeckel, M.; Friedrich, J. A Practical Example of GaN-LED Failure Cause Analysis by Application of Combined Electron Microscopy Techniques. Materials 2017, 10, 1202.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop